Nonvolatile semiconductor memory device having element isolating region of trench type

ABSTRACT

Disclosure is semiconductor device of a selective gate region, comprising a semiconductor layer, a first insulating film formed on the semiconductor layer, a first electrode layer formed on the first insulating layer, an element isolating region comprising an element isolating insulating film formed to extend through the first electrode layer and the first insulating film to reach an inner region of the semiconductor layer, the element isolating region isolating a element region and being self-aligned with the first electrode layer, a second insulating film formed on the first electrode layer and the element isolating region, an open portion exposing a surface of the first electrode layer being formed in the second insulating film, and a second electrode layer formed on the second insulating film and the exposed surface of the first electrode layer, the second electrode layer being electrically connected to the first electrode layer via the open portion.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a division of and claims the benefit of priorityfrom U.S. Ser. No. 11/168,410, filed Jun. 29, 2005, which is a divisionof U.S. Pat. No. 6,927,449, issued Aug. 9, 2005, which is a division ofU.S. Pat. No. 6,835,978, issued Dec. 28, 2004, and is based upon andclaims the benefit of priority from the prior Japanese PatentApplications No. 2000-291910, filed Sep. 26, 2000, and No. 2001-272224,filed Sep. 7, 2001, the entire contents of which are incorporated hereinby reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a nonvolatile semiconductor memorydevice and a method of manufacturing the same, particularly, to a gatestructure of a semiconductor device having a nonvolatile memorytransistor including a floating gate and a control gate, a selectivetransistor arranged close to said memory transistor, and a peripheralcircuit mounted to the same chip.

2. Description of the Related Art

Known is a flash memory having a memory transistor including a floatinggate and a control gate, a selective transistor arranged close to thememory transistor, and a peripheral circuit for driving the memorytransistor and the selective transistor mounted to the same chip. Atypical flash memory is called a NAND type flash memory. The NAND typeflash memory includes a plurality of memory transistors connected inseries, a selective transistor arranged close to the both edge portionsof the memory transistor, and a peripheral circuit transistor fordriving the memory transistor and the selective transistor. The regionin which are arranged the memory transistors is called a memory cellarray region, the region in which is arranged the selective transistoris called a selective gate region, and the region in which is arrangedthe peripheral circuit transistor is called a peripheral circuit region.

The method of preparing the flash memory of this type includes, forexample, the steps of forming a gate insulating film on a semiconductorlayer, depositing a polycrystalline silicon (polysilicon) film providingthe floating gate of the memory transistor on the gate insulating film,and forming an element isolating region. In this case, a gate electrodeof a two layer structure consisting of a floating gate and a controlgate is present in at least a portion of the selective gate region andthe peripheral circuit region as in the memory cell array region. Itshould be noted that it is necessary for the transistor in the selectivegate region and the peripheral circuit region to be electricallyconnected to an upper wiring by withdrawing the floating gate. Aconventional semiconductor device of this type will now be described.

FIG. 46A is a plan view showing the memory cell array region and theselective gate region of the semiconductor device according to the firstprior art.

FIG. 46B is a plan view showing the peripheral circuit region of thesemiconductor device according to the first prior art. FIG. 47A is crosssectional view of the semiconductor device along the lineXXXXVIIA-XXXXVIIA shown in FIGS. 46A and 46B. FIG. 47B is crosssectional view of the semiconductor device along the lineXXXXVIIB-XXXXVIIB shown in FIG. 46A.

The first a prior art is disclosed in Japanese Patent Disclosure (Kokai)No. 11-163304.

As shown in FIGS. 46A, 46B, 47A and 47B, a first insulating film 12 isformed on a semiconductor layer 11, and a first floating gate electrodelayer 13 a is formed on the first insulating film 12. Then, an elementisolating groove is formed and the element isolating groove thus formedis filled with an insulating film. The insulating film if planarizeduntil the first floating gate electrode layer 13 a is exposed to theoutside so as to form an element isolating region 15. Then, a secondfloating gate layer 13 b consisting of polysilicon is formed on thefirst floating gate layer 13 a and the element isolating region 15,followed by patterning the second floating gate electrode layer 13 b bya lithography and an etching. Consequently, an open potion 50 is formedon the element isolating region 15 of the memory sell array region andthe open potion 50 isolated the second floating gate electrode layer 13b. Further, a second insulating film 16 is formed on the second floatinggate electrode layer 13 b and the element isolating region 15, followedby forming a control gate electrode layer 18 on the second insulatingfilm 16. After the control gate electrode layer 18, the secondinsulating film 16 and the first and second floating gate electrodelayers 13 a and 13 b are patterned, a third insulating film 19 is formedon the entire surface of the semiconductor layer 11. Further, after acontact hole is formed in the third insulating film 19, a wiring 21connected to the contact hole 20 is formed. As a result, the wiring 21is connected to the control gate electrode layer 18 via the contact hole20 in the memory cell array region, and the wiring 21 is connected tothe first and second floating gate electrode layers 13 a, 13 b via thecontact hole 20 in the selective gate region and the peripheral circuitregion.

The semiconductor device according to the first prior art describedabove comprises a floating gate of the double layer structure consistingof the first and second floating gate electrode layers 13 a and 13 b. Inthe floating gate of the particular construction, the first floatinggate electrode layer 13 a is self-aligned with the element isolatingregion 15, and the second floating gate electrode layer 13 b is pulledup onto the element isolating region 15. However, the first prior artdescribed above gives rise to problems.

First of all, in the memory cell array region, it was necessary to setthe width P of the open portion 50 such that the open portion 50 is notburied with the second insulating film 16. It was also necessary toensure an aligning allowance Q between the open portion 50 and theelement region 10 in the lithography. However, it was difficult tofinely adjust the open portion 50 because of the limit in the resolutionof the photoresist in patterning the open portion 50. As a result, itwas difficult to achieve the fineness beyond a certain level, with theresult that it was difficult to make the memory cell finer.

On the other hand, in the peripheral circuit region, the contact hole 20is formed on the element isolating region 15, making it possible toavoid the damage done to the element region. However, the element regionis formed a long distance away from the connecting portion 25 betweenthe second floating gate electrode layer 13 b and the contact hole 20.Therefore, since the second floating gate electrode layer 13 b is formedof in general an electrode material having a high resistivity such aspolysilicon, the delay caused by the resistance is increased so as tolower the performance of the element. It should also be noted that, ifthe second floating gate electrode layer 13 b is allowed to extend overthe element isolating region 15, a capacitance coupling is formedbetween the semiconductor layer 11 and the floating gate with theinsulating film of the element isolating region 15 interposedtherebetween, leading to an increased RC delay.

Particularly, when it comes to the selective transistor of the NAND typeflash memory, the increase in the RC delay described above is a seriousproblem to be solved. The contact to the second floating gate electrodelayer 13 b is formed as required for several cells within the memorycell array. The contact portion requires an area so as to increase thearea of the memory cell array. Also, since the contact hole 20 can beformed in only a part of the memory cell array, the contact hole 20 isconnected to the transistor via the second floating gate electrode layer13 b formed of polysilicon having a high resistivity. It follows thatthe problem of the RC delay time to the transistor positioned remotefrom the contact hole 20 is rendered serious. It should be noted thatthe increase in the delay time of the selective transistor adverselyaffects the reading speed of the memory cell.

FIG. 48A is a plan view showing the memory cell array region and theselective gate region of the semiconductor device according to thesecond prior art. FIG. 48B is a plan view showing the peripheral circuitregion of the semiconductor device according to the second prior art.FIG. 49A is cross sectional view of the semiconductor device along theline XXXXIXA-XXXXIXA shown in FIGS. 48A and 48B. FIG. 49B is crosssectional view of the semiconductor device along the lineXXXXIXB-XXXXIXB shown in FIG. 48A. The second prior art is intended toavoid the problem inherent in the first prior art that it is difficultto make the memory cell portion finer.

As shown in the drawing, a first insulating film 12 is formed on asemiconductor layer 11, and a floating gate electrode layer 13 is formedon the first insulating film 12. Then, an element isolating groove isformed, followed by filling the element isolating groove with aninsulating film. An element isolating region 15 is formed by planarizingthe insulating film until the surface of the floating gate electrodelayer 13 is exposed to the outside. Then, an upper portion of theelement isolating region 15 in the memory cell array region and theselective gate region is removed so as to allow the upper surface of theelement isolating region 15 in the memory cell array region and theselective gate region to be positioned lower than the upper surface ofthe floating gate electrode 13. Further, a second insulating film 16 isformed on the floating gate electrode layer 13 and the element isolatingregion 15, followed by removing the second insulating film 16 in theperipheral circuit region and the selective gate region. In the neststep, a control gate electrode layer 18 is formed on the secondinsulating film 16, the floating gate electrode layer 13 and the elementisolating region 15, followed by patterning the control gate electrodelayer 18, the second insulating film 16 and the floating gate electrodelayer 13. After the patterning step, a third insulating film 19 isformed on the entire surface of the semiconductor layer 11, followed byforming a contact hold 20 in the third insulating film 19. In the neststep, a wiring 21 connected to the contact hole 20 is formed.

In the semiconductor device according to the second prior art describedabove, it is unnecessary to ensure an aligning allowance Q in thelithography, which is required in the first prior art, so as to make itpossible to miniaturize the memory cell. Also, since the control gateelectrode layer 18 is deposited after removal of the selective gateregion and the second insulating film 16 of the peripheral circuitregion, the limitation in the position of the contact hole 20 can beeliminated even if the circuit is separated such that the floating gateis left unremoved in only the element region 10. However, the secondprior art gives rise to the problem as described below.

First, the second insulating film 16 is interposed between the floatinggate electrode 13 and the control gate electrode layer 18 in the gate inthe memory cell array region. However, the second insulating film 16 isnot interposed between the floating gate electrode 13 and the controlgate electrode layer 18 in the gate in the peripheral circuit region andthe selective gate region. In other words, the memory cell array region,the peripheral circuit region and the selective gate region differ fromeach other in the laminate structure of the gate. As a result, informing the gate, it is necessary for the memory cell array region, theperipheral circuit region and the selective gate region to be differentfrom each other in the etching conditions, giving rise to the problemthat it is impossible to form simultaneously the gates in the memorycell array region, peripheral circuit region and the selective gateregion.

It should also be noted that, if it is impossible to form simultaneouslythe gates in the memory cell array region, the peripheral circuit regionand the selective gate region, the electrode layer is left unremoved inthe boundary portion between the memory cell array region, theperipheral circuit region and the selective gate region. Also, it isnecessary to ensure a sufficient allowance region in order to preventthe semiconductor layer from being dug by the etching treatmentperformed twice. In order to process accurately both the memory cellarray region, the peripheral circuit region and the selective gateregion differing from each other in the laminate structure, it isnecessary to ensure various allowances in the boundary portion, leadingto an increase in the chip area. Particularly, in the construction ofthe NAND type flash memory, it is necessary to diminish the distance Dbetween the memory cell and the selective transistor as much as possiblein order to increase the degree of integration of the memory cell array,as shown in FIG. 48A. What should be noted is that, if an allowance isprovided in the boundary portion, the degree of integration is markedlylowered.

As described above it was very difficult to avoid the resistance delayin the peripheral circuit region and the selective gate region whileminiaturizing the memory cell array region and to form simultaneouslythe gates in the memory cell array region, the peripheral circuit regionand the selective gate region in the semiconductor device according toeach of the first and second prior arts.

BRIEF SUMMARY OF THE INVENTION

According to a first aspect of the present invention, there is provideda semiconductor device, comprising a semiconductor layer; a firstinsulating film formed on the semiconductor layer; a first electrodelayer formed on the first insulating layer; an element isolating regioncomprising an element isolating insulating film formed to extend throughthe first electrode layer and the first insulating film to reach aninner region of the semiconductor layer, the element isolating regionisolating an element region and being self-aligned with the firstelectrode layer; a second insulating film formed on the first electrodelayer and the element isolating region, an open portion exposing asurface of the first electrode layer being formed in the secondinsulating film; and a second electrode layer formed on the secondinsulating film and the exposed surface of the first electrode layer,the second electrode layer being electrically connected to the firstelectrode layer via the open portion.

According to a second aspect of the present invention, there is provideda semiconductor device, comprising a semiconductor layer; a firstinsulating film formed on the semiconductor layer; a first electrodelayer firmed on the first insulating layer; an element isolating regioncomprising an element isolating insulating film formed to extend throughthe first electrode layer and the first insulating film to reach aninner region of the semiconductor layer, the element isolating regionisolating an element region and being self-aligned with the firstelectrode layer; a second insulating film formed on the first electrodelayer and the element isolating region, an open portion exposing asurface of the first electrode layer being formed in the secondinsulating film; a second electrode layer formed on the secondinsulating film; and a third electrode layer formed on the secondelectrode layer and the exposed surface of the first electrode layer,the third electrode layer being electrically connected to the firstelectrode layer via the open portion.

According to a third aspect of the present invention, there is provideda method of manufacturing a semiconductor device in a selective gateregion provided a selective gate transistor formed adjacent to a memorycell array region, comprising: forming a first insulating film on asemiconductor layer; forming a first electrode layer on the firstinsulating film; forming an element isolating region comprising anelement isolating insulating film extending through the first electrodelayer and the first insulating film to reach an inner region of thesemiconductor layer, the element isolating region isolating an elementregion; forming a second insulating film on the element isolating regionand the first electrode layer; forming an open portion within the secondinsulating film to expose a surface of the first electrode layer;forming a second electrode layer on the second insulating film and theexposed surface of the first electrode layer; and selectively removingthe first electrode layer, the second insulating film and the secondelectrode layer, to form a gate electrode.

According to a fourth aspect of the present invention, there is provideda method of manufacturing a semiconductor device in a selective gateregion provided a selective gate transistor formed adjacent to a memorycell array region, comprising: forming a first insulating film on asemiconductor layer; forming a first electrode layer on the firstinsulating film; forming an element isolating region comprising anelement isolating insulating film extending through the first electrodelayer and the first insulating film to reach an inner region of thesemiconductor layer, the element isolating region isolating an elementregion; forming a second insulating film on the element isolating regionand the first electrode layer; forming a second electrode layer on thesecond insulating film; forming an open portion within the secondinsulating film to expose a surface of the first electrode layer;forming a third electrode layer on the second electrode layer and theexposed surface of the first electrode layer; and selectively removingthe first electrode layer, the second insulating film, the secondelectrode layer and the third electrode layer to form a gate electrode.

According to a fifth aspect of the present invention, there is provideda method of manufacturing a semiconductor device in a selective gateregion provided a selective gate transistor formed adjacent to a memorycell array region, comprising: forming a first insulating film on asemiconductor layer; forming a first electrode layer on the firstinsulating film; forming an element isolating region comprising anelement isolating insulating film extending through the first electrodelayer and the first insulating film to reach an inner region of thesemiconductor layer, the element isolating region isolating an elementregion; forming a second insulating film on the element isolating regionand the first electrode layer; forming a second electrode layer on thesecond insulating film; forming a first mask layer on the secondelectrode layer; forming a groove comprising a pair of mutually facingside surfaces in the first mask layer, the groove being formed to exposepartly a surface of the second electrode layer; forming a side wallcomprising a second mask layer on the exposed side surface of thegroove; selectively removing the second electrode layer and the secondinsulating film by using the first and second mask layers to form anopen portion exposing a surface of the first electrode layer; removingthe first and second mask layers; forming a third electrode layer on thesecond electrode layer and the exposed surface of the first electrodelayer; and selectively removing the first electrode layer, the secondinsulating film, the second electrode layer and the third electrodelayer to form a gate electrode.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING

FIG. 1 is a plan view showing the memory cell array region and theselective gate region of a semiconductor device according to a firstembodiment of the present invention;

FIG. 2 is a cross sectional view of the semiconductor device along theline II-II shown in FIG. 1;

FIG. 3A is a cross sectional view of the semiconductor device along theline IIIA-IIIA shown in FIG. 1;

FIG. 3B is a cross sectional view of the semiconductor device along theline IIIB-IIIB shown in FIG. 1;

FIGS. 4, 5, 6, 7, 8 and 9 are cross sectional views collectively showingthe manufacturing process of the semiconductor device according to thefirst embodiment of the present invention;

FIG. 10 is a cross sectional view showing the memory cell array regionand the selective gate region of the semiconductor device according to asecond embodiment of the present invention;

FIGS. 11, 12, 13 and 14 are cross sectional views collectively showingthe manufacturing process of the semiconductor device according to thesecond embodiment of the present invention;

FIGS. 15, 16, 17 and 18 are cross sectional views collectively showingthe manufacturing process of the semiconductor device according to athird embodiment of the present invention;

FIG. 19 is a plan view showing the peripheral circuit region of asemiconductor device according to a fourth embodiment of the presentinvention;

FIG. 20 is cross sectional view of the semiconductor device along theline XX-XX shown in FIG. 19;

FIG. 21 is a cross sectional view showing the peripheral circuit regionand the memory cell array region of the semiconductor device accordingto the fourth embodiment of the present invention;

FIG. 22 is a cross sectional view showing the peripheral circuit regionand the memory cell array region of a semiconductor device according toa fifth embodiment of the present invention;

FIG. 23 is a plan view showing the peripheral circuit region of asemiconductor device according to a sixth embodiment of the presentinvention;

FIG. 24 is a cross sectional view of the semiconductor device along theline XXIV-XXIV shown in FIG. 23;

FIG. 25 is a cross sectional view showing the peripheral circuit regionand the memory cell array region of the semiconductor device accordingto the sixth embodiment of the present invention;

FIG. 26A is a plan view showing a semiconductor device according to theprior art;

FIG. 26B is a plan view showing the semiconductor device according tothe sixth embodiment of the present invention;

FIGS. 27 and 28 are cross sectional views collectively showing asemiconductor device according to the prior art;

FIG. 29A is a plan view showing a semiconductor device according to theprior art;

FIG. 29B is a plan view showing the semiconductor device according tothe sixth embodiment of the present invention;

FIG. 30A is a cross sectional view showing a semiconductor deviceaccording to the prior art;

FIG. 30B is a cross sectional view showing the semiconductor deviceaccording to the sixth embodiment of the present invention;

FIG. 31 is a plan view showing a semiconductor device according to aseventh embodiment of the present invention;

FIG. 32 is a cross sectional view of the semiconductor device along theline XXXII-XXXII shown in FIG. 31;

FIG. 33 is a plan view showing a semiconductor device according to aneighth embodiment of the present invention;

FIG. 34 is a cross sectional view of the semiconductor device along theline XXXIV-XXXIV shown in FIG. 35;

FIG. 35 is a plan view showing the other semiconductor device accordingto the eighth embodiment of the present invention;

FIG. 36 is a plan view showing a semiconductor device according to aninth embodiment of the present invention;

FIG. 37 is a cross sectional view of the semiconductor device along theline XXXVII-XXXVII shown in FIG. 36;

FIG. 38 is a cross sectional view showing the semiconductor deviceaccording to the ninth embodiment of the present invention;

FIG. 39A is a plan view showing a memory transistor and a selective gatetransistor of the semiconductor device according to the ninth embodimentof the present invention;

FIG. 39B is a plan view showing the peripheral circuit transistor of thesemiconductor device according to the ninth embodiment of the presentinvention;

FIG. 40A is a plan view showing a semiconductor device according to theprior art;

FIGS. 40B and 40C are plan views collectively showing a semiconductordevice according to a tenth embodiment of the present invention;

FIGS. 41A and 41B are cross sectional views collectively showing asemiconductor device according to a eleventh embodiment of the presentinvention;

FIGS. 42A, 42B, 42C, 43A and 43B are cross sectional views collectivelyshowing a conventional semiconductor device;

FIGS. 44A and 44B are cross sectional views collectively showing themanufacturing process of the semiconductor device according to a twelfthembodiment of the present invention;

FIG. 45 is a cross sectional view showing the other semiconductor deviceaccording to the each embodiment of the present invention;

FIG. 46A is a plan view showing the memory cell array region and theselective gate region of the semiconductor device according to the firstprior art;

FIG. 46B is a plan view showing the peripheral circuit region of thesemiconductor device according to the first prior art;

FIG. 47A is a cross sectional view of the semiconductor device along theline XXXXVIIA-XXXXVIIA shown in FIGS. 46A and 46B;

FIG. 47B is a cross sectional view of the semiconductor device along theline XXXXVIIB-XXXXVIIB, shown in FIG. 46A;

FIG. 48A is a plan view showing the memory cell array region and theselective gate region of the semiconductor device according to thesecond prior art;

FIG. 48B is a plan view showing the peripheral circuit region of thesemiconductor device according to the second prior art;

FIG. 49A is a cross sectional view of the semiconductor device along theline XXXXIXA-XXXXIXA shown in FIGS. 48A and 48B; and

FIG. 49B is a cross sectional view of the semiconductor device along theline XXXXIXB-XXXXIXB shown in FIG. 48A.

DETAILED DESCRIPTION OF THE INVENTION

The present invention is directed to the gate structure of asemiconductor device having a nonvolatile memory transistor including afloating gate, a selective transistor arranged close to the memory cell,and a transistor of a peripheral circuit for driving the memory cellarray mounted to the same chip. The present invention is applied to, forexample, a NAND type flash memory.

Some embodiments of the present invention will now be described withreference to the accompanying drawings. In the following description,the common portions of the semiconductor device are denoted by thecommon reference numerals. Incidentally, in the drawings, the memorycell array region denotes the region in which a memory transistor isarranged, the selective gate region denotes the region in which theselective transistor is arranged, and the peripheral circuit regiondenotes the region in which the peripheral circuit transistor isarranged.

First Embodiment

A first embodiment is directed to the constructions of the memorytransistor and the selective transistor. In this case, an open portionis formed in a part of the insulating film between the first and secondelectrodes constituting a selective transistor.

FIG. 1 is a plan view showing the memory cell array region and theselective gate region of a semiconductor device according to a firstembodiment of the present invention. FIG. 2 is a cross sectional view ofthe semiconductor device along the line II-II shown in FIG. 1. FIG. 3Ais a cross sectional view of the semiconductor device along the lineIIIA-IIIA shown in FIG. 1. FIG. 3B is a cross sectional view of thesemiconductor device along the line IIIB-IIIB shown in FIG. 1.

As shown in FIG. 1, a plurality of memory transistors are connected inseries in the memory cell array region, and a selective transistor isarranged close to the memory transistors at both edge portions of thememory cell array region. The selective transistor comprises a firstelectrode layer, a second electrode layer, and an insulating film formedbetween the first electrode layer and the second electrode layer. Theinsulating film is formed in only the edge portions of the firstelectrode layer and the second electrode layer, and an open portion 17is formed in the central portion between the first electrode layer andthe second electrode layer. The open portion 17 is in the shape of along stripe crossing the first electrode layer of a plurality of cellsand the element isolating region. The gate length L of the selectivetransistor is longer than the gate length of the memory transistor.Also, the distance D between the memory cell and the selectivetransistor is about the minimum processing size.

As shown in FIG. 2, the semiconductor device of the memory cell arrayregion comprises the semiconductor layer 11, the element isolatingregion 15 formed on the semiconductor layer 11 of a trench type forisolating the element region 10, the first electrode layer 13 formed inthe element region 10 with the first insulating film 12 interposedtherebetween, the second insulating film 16 formed on the firstelectrode layer 13 and the element isolating region 15, and the secondelectrode layer 18 formed on the second insulating film 16. Also, thefirst electrode layer 13 is formed above the element region 10 andself-aligned with the element isolating region 15. The first electrodelayer 13 is not pulled up onto the element isolating region 15, such asthe first prior art. It should be noted that the surface of the elementisolating region 15 is positioned lower than the surface of the firstelectrode layer 13. In the memory cell array region, the first electrode13 performs the function of a floating gate, and the second electrodelayer 18 performs the function of a control gate.

As shown in FIG. 3A, the semiconductor device in the selective gateregion comprises a first electrode layer 13 formed in the element region10 with the first insulating film 12 interposed therebetween, a secondinsulating film 16 formed on the first electrode layer 13 and theelement separating region 15, and a second electrode layer 18 formed onthe second insulating film 16. In the selective transistor of theparticular construction, an open portion 17 is formed partially in thesecond insulating film 16 so as to permit the second electrode layer tobe electrically connected to the first electrode layer via the openportion 17.

Incidentally, the pattern of the open portion 17 extends over theelement separating region 15 in the selective gate region as shown inFIG. 3B, with the result that the bottom surface of the groove 17′ ispositioned higher than the element region 10.

It should be noted that the second electrode layer 18 has a resistivitylower than that of the first electrode layer 13. Therefore, it isdesirable for the second electrode layer 18 to be formed of, forexample, a metal layer having a high melting point or a lamination layerfilm comprising a metal silicide layer having a high melting point and apolysilicon layer. Also, it is desirable for the second insulating film16 to be formed of a composite insulating film comprising a siliconnitride film such as an ONO (Oxide Nitride Oxide) film. The siliconnitride film effectively prevents the etching damage in the formation ofthe contact hole 20 and also prevents effectively the layer for themetal wiring formed within the contact hole from adversely affecting thegate insulating film 12.

FIGS. 4, 5, 6, 7, 8 and 9 are cross sectional views collectively showingthe manufacturing process of the semiconductor device according to thefirst embodiment of the present invention. FIGS. 4 and 5 are crosssectional views of the semiconductor device along the line II-II shownin FIG. 1, FIGS. 6-9 are cross sectional views of the semiconductordevice along the line IIIA-IIIA shown in FIG. 1. Described in thefollowing is the method of manufacturing the semiconductor deviceaccording to the first embodiment of the present invention.

First of all, as shown in FIG. 4, the first insulating film 12 is formedon the semiconductor layer 11. The first insulating film 12 performs thefunction of a tunneling Oxide film and has a thickness of, for example,8 to 10 nm. In the next step, the first electrode layer 13, for example,a polysilicon film of doping phosphorus, is formed on the firstinsulating film 12. Then, an element isolating groove 14 is formed,followed by filling the element isolating groove 14 with an insulatingfilm. Further, the insulating film filling the element isolating groove14 is planarized until the surface of the first electrode layer 13 isexposed to the outside so as to form the element isolating region 15 ofSTI (Shallow Trench Isolation) structure.

In the next step, as shown in FIG. 5, an upper portion of the elementisolating region 15 in the memory cell region is removed so as to allowthe surface of the element isolating region 15 in the memory cell regionto be positioned lower than the surface of the first electrode layer 13.Then, the second insulating film 16, e.g., an ONO film, is formed on theentire surface of the semiconductor layer 11.

In the next step, as shown in FIG. 6, a mask layer (photoresist) 22 isdeposited on the second insulating film 16, followed by patterning themask layer 22.

In the next step, as shown in FIG. 7, the second insulating film 16above the element region 10 in the selective gate region is partlyremoved by lithography and etching, as a mask of the patterned masklayer 22. As a result, the surface of the first electrode layer 13 ispartly exposed to the outside so as to form the open portion 17.

In the next step, as shown in FIG. 8, the second electrode layer 18,e.g., a metal layer having a high melting point or a lamination layerfilm comprising a metal silicide layer having a high melting point and apolysilicon layer, is formed on the entire surface of the semiconductorlayer 11. As a result, the second electrode layer 18 is electricallyconnected to the first electrode layer 13 in the selective gate region.

In the next step, as shown in FIG. 9, the second electrode layer 18, thesecond insulating film 16 and the first electrode layer 13 are formed tothe gate pattern. Concretely, first of all, the gate pattern is formed,followed by patterning the second electrode layer 18 as a stopper of thesecond insulating film 16. Further, the second insulating film 16 ispatterned as a stopper of the first electrode layer 13. Finally, thefirst electrode layer 13 is patterned as a stopper of the firstinsulating film 12. This process is self-aligned with formation the gateelectrode of a two-layer structure in the memory cell region and theselective gate region.

In the next step, as shown in FIG. 2, the third insulating film 19 isformed on the entire surface of the semiconductor layer 11, followed byforming the contact hole 20 in the third insulating film 19, the contacthole 20 being positioned above the element isolating region 15. Also,forming of the contact hole 20 in the memory cell region, the contacthole is formed above the element region formed source and drain regionof the peripheral transistor. Further, the wiring 21 connected to thecontact hole 20 is formed.

According to the first embodiment described above, the first electrodelayer 13 is self-aligned with formation of the element isolating region15, with the result that the fine processing of the first electrodelayer 13 can be performed easily, compared with the 20 first prior artreferred to previously it follows that it is possible to miniaturize thememory cell array region.

Also, in the selective gate region, the electrical connection betweenthe wiring 21 for supplying signals to the first electrode layer 13 andthe first electrode layer 13 is achieved via the second electrode layer18 extended over the element isolating region 15. In other words, it isunnecessary to draw the first electrode layer 13 having a highresistively onto the element isolating region 15, making it possible toavoid the problem of the delay caused by the resistance of the firstelectrode layer 13 and to avoid the problem of the RC delay caused bythe capacitive coupling between the semiconductor layer 11 and the firstelectrode layer 13. In addition, since the second electrode layer 18 isformed of a metal layer having a high melting point or a low resistancelayer including a metal silicide layer having a high melting point, itis possible to avoid the problem of the resistance delay, making itpossible to obtain an operating speed substantially equal to that of thetransistor formed of a gate electrode layer of a single layer structurehaving a low resistivity. It follows that it is possible to avoid theproblem that the reading speed of the memory cell is adversely affectedby the increase in the delay time.

Concerning the gate of the selective gate region, the open portion 18 isformed in the center of the second electrode layer 18. Therefore, thegate is of a two-layer structure consisting of the first electrode layer13 and the second electrode layer 18. However, the gate is of athree-layer structure, consisting of the first electrode layer 13, thesecond electrode layer 18, and the second insulating film 16 interposedbetween the first electrode layer 13 and the second electrode layer 18in the edge portion of the second electrode layer 18 in which the gateis formed. It follows that, concerning the region in which the gate isformed, the memory cell array region and the selective gate region areequal to each other in the laminate structure of the gate. As a result,it is possible to form simultaneously the gates in the memory cell arrayregion and the selective gate region. In addition, since a specialstructure is not required between the selective gate region and thememory cell array region, it is possible to set the distance D betweenthe memory cell and the selective transistor at, for example, theminimum processing size.

Also, in the open portion 17 of the insulating film 16, the length ofthe open portion 17 in a direction perpendicular to the direction of thegate length L is large, though the width of the open portion 17 in thedirection of the gate length L is small. As a result, the resolution isfacilitated in the lithography process in patterning the open portion10. It follows that it is possible to form a fine open portion 17 evenin the case where the gate length L of the selective transistor isrendered long in accordance with miniaturization of the selectivetransistor.

As described above, the first embodiment of the present invention makesit possible to decrease the memory cell size and to improve the degreeof integration including the selective transistor. Particularly, it ispossible to decrease the size of the memory cell array of the NAND typeflash memory.

Second Embodiment

A second embodiment is featured in that the control gate is formed of aplurality of electrode layers in order to prevent the deterioration inthe reliability of the second insulating film in the memory cell arrayregion in forming an open portion.

FIG. 10 is a cross sectional view showing the memory cell array regionand the selective gate region of the semiconductor device according to asecond embodiment of the present invention. FIG. 10 is a cross sectionalview of the semiconductor device along the line II-II shown in FIG. 1.As shown in FIG. 10, the semiconductor device according to the secondembodiment of the present invention comprises a control gate of alaminate structure consisting of the second and third electrode layers18 a and 18 b.

FIGS. 11, 12, 13 and 14 are cross sectional views collectively showingthe manufacturing process of the semiconductor device according to thesecond embodiment of the present invention. FIGS. 11, 12, 13 and 14 arecross sectional views of the semiconductor device along the lineIIIA-IIIA shown in FIG. 1. Described in the following is the method ofmanufacturing the semiconductor device according to the secondembodiment of the present invention. A description of process common tothe first embodiment will be omitted, and only different process will bedescribed. In the first step, as shown in FIG. 5, the second insulatingfilm 16 is formed on the first electrode layer 13, such as the firstembodiment.

In the next step, as shown in FIG. 11, the second electrode layer 18 ais formed on the second insulating film 16, before forming the openportion 17.

In the next step, as shown in FIG. 12, the second electrode layer 18 aand the second insulating film 16 above the element region 10 in theselective gate region is partly removed by lithography and etching. As aresult, the surface of the first electrode layer 13 is partly exposed tothe outside so as to form the open portion 17.

In the next step, as shown in FIG. 13, the third electrode layer 18 b isformed on the entire surface of the semiconductor layer 11. As a result,the second electrode layer 18 a is electrically connected to the thirdelectrode layer 18 b in the selective gate region.

In the next step, as shown in FIG. 14, the third electrode layer 18 b,the second electrode layer 18 a, the second insulating film 16 and thefirst electrode layer 13 are formed to the gate pattern. Then, thesemiconductor device according to the second embodiment of the presentinvention is formed by the process similar to that in the firstembodiment.

The second embodiment, which produces the effect similar to thatobtained in the first embodiment, further produces an additional effectas follows.

In the first embodiment, a resist forming the mask 22 is formed on thesecond insulating film 6 in the memory cell array region in thelithography process, i.e., the step shown in FIG. 6, for forming theopen portion 17. As a result, the resist is brought into contact withthe second insulating film 16 in some cases so as to deteriorate thereliability of the second insulating film. For example, the impuritycontaminant is migrated from the resist into the second insulating film16. Also, the insulating properties of the second insulating film arelowered in various stages of the lithography process. Under thecircumstances, the second electrode layer 18 a is formed in the secondembodiment on the second insulating film 16 before formation of the openportion 17. What should be noted is that the second electrode layer 18 aperforms the function of a protective film in the lithography process soas to eliminate the problem in respect of the adverse effect given tothe second insulating film 16.

Third Embodiment

A third embodiment is directed to a method that is effective in the casewhere it is desired to decrease the width of the open portion referredto previously in conjunction with the first embodiment. For example, theminiaturization has proceeded to the stage that the gate length of theselective transistor has been decreased to about 0.2 μm in the NAND typeflash memory. If an open portion is to be formed in only the centralportion of the gate, it is necessary to form a pattern having a widthof, for example, 0.1 μm. The third embodiment is effective for such acase. Incidentally, the semiconductor device according to the thirdembodiment of the present invention is substantially equal to thesemiconductor device according to the second embodiment and, thus,description of semiconductor device according to the third embodiment isomitted.

FIGS. 15, 16, 17 and 18 are cross sectional views collectively showingthe manufacturing process of the semiconductor device according to athird embodiment of the present invention. FIGS. 15, 16, 17 and 18 arecross sectional views of the semiconductor device along the lineIIIA-IIIA shown in FIG. 1. Described in the following is the method ofmanufacturing the semiconductor device according to the third embodimentof the present invention. A description of process common to the firstand second embodiment will be omitted, and only different process willbe described.

In the first step, as shown in FIG. 11, the second electrode layer 18 ais formed on the second insulating film 16, such as the secondembodiment.

In the next step, as shown in FIG. 15, a first mask layer (oxide film)22 is deposited on the second electrode layer 18 a by a CVD (ChemicalVapor Deposition) method, followed by patterning the first mask layer 22by lithography so as to form a groove exposing partly the surface of thesecond electrode layer 18 a above the element region 10.

Then, as shown in FIG. 16, a second mask layer 23 (oxide film) isdeposited on the first mask layer 22 and the second electrode layer 18a, followed by selectively removing by etch back the second mask layer23 from the first mask layer 22 and the second electrode layer 18 a. Asa result, side walls each consisting of the remaining second mask layer23 are formed on the side surfaces of the groove.

In the next step, the electrode layer 18 a and the second insulatingfilm 16 are selectively removed by using the first and second masklayers 22, 23 as a mask so as to form the open portion 17 above theelement region 10, as shown in FIG. 17. Then, the first and second masklayers 22 and 23 are removed.

Further, the third electrode layer 18 b is formed on the secondelectrode layer 18 a and the first electrode layer 13, as shown in FIG.18 so as to allow the first electrode layer 13 to be connected to thethird electrode layer 18 b.

The third embodiment permits producing the effects similar to thoseobtained in the first and second embodiments.

It should also be noted that the second electrode layer 18 aconstituting a part of the control gate and the second insulating film16 are self-aligned with the open portion 17. As a result, it ispossible to form the open portion 17 with a width smaller than the sizethat can be achieved by the lithography, making it possible to achievethe connection between the first electrode layer 13 and the thirdelectrode layer 18 b with a space smaller than that in the firstembodiment. It follows that It is possible to further miniaturize a gatelength of the selective transistor, compared with the first embodiment.

As described above, the third embodiment is highly effective in thecases where the gate length of the selective transistor is small so asto make it impossible to form the open portion in the center of the gatewith a size.

Incidentally, the method utilizing formation of the side wall describedabove permits forming the open portion 17 with a width smaller than thatin the case of using the lithography. Alternatively, it is also possibleto employ the method of, for example, swelling the photoresist by theheat treatment after the lithography process so as to form the openportion of a smaller space. As a result, it is possible to form the openportion having the width smaller than the width of the groove formed bythe lithography process.

Fourth Embodiment

In each of the first to third embodiments of the present invention, thetechnical idea of the present invention is applied to the memory cellarray region and the selective gate region. On the other hand, a fourthembodiment of the present invention is featured in that the structuresimilar to that of the selective gate region is also applied to theperipheral circuit region.

FIG. 19 is a plan view showing the peripheral circuit region of asemiconductor device according to a fourth embodiment of the presentinvention. FIG. 20 is cross sectional view of the semiconductor devicealong the line XX-XX shown in FIG. 19.

As shown in FIGS. 19 and 20, the semiconductor device in the peripheralcircuit region comprises a semiconductor substrate 11, an elementisolating region 15 for isolating an element region 10 of thesemiconductor layer 11, a first electrode layer 13 formed on the elementisolating region 10 with the first insulating film 12 interposedtherebetween and self-aligned with the element isolating region 15, asecond insulating film 16 having an open portion 17 partly exposing thesurface of the first electrode layer 13 to the outside, and a secondelectrode layer 18 formed on the second insulating film 16 and withinthe open portion 17. The first electrode 13 is connected to the secondelectrode layer 18 via the open portion 17.

FIG. 21 is a plan view showing the peripheral circuit region and thememory cell array region of the semiconductor device according to thefourth embodiment of the present invention. As apparent from FIG. 21,the construction of the memory cell array region and the selective gateregion is equal to that in the first embodiment. Therefore, thedescription is omitted in respect of the constructions of the memorycell array region and the selective gate region.

As shown in FIG. 21, the contact hole 20 in the fourth embodiment isconnected to the second electrode layer 18 above the element isolatingregion 15. Also, the electrical connection between the first electrodelayer 13 and a wiring 21 for supplying signals to the first electrodelayer 13 is achieved via the second electrode layer 18 extending overthe element isolating region 15.

The fourth embodiment, which produces the effect similar to thatobtained in the first embodiment, further produces an additional effectas follows.

First of all, in the fourth embodiment of the present invention, thefirst electrode layer 13 having a low resistivity is connected to thesecond electrode layer 18 having a low resistivity right above theelement region 10. As a result, it is possible to shorten the RC delaytime of the peripheral circuit, compared with the prior art, as in theselective transistor.

Also, the open portion 17 is not present in the edge portions of thefirst electrode layer and the second electrode layer above the elementregion 10. Therefore, in the process step of the gate, it is possible toprocess simultaneously the peripheral circuit region in addition to thememory cell array region and the selective gate region. Where the gatesof all the elements can be processed simultaneously, the aligningallowance in the lithography process requiring the contact hole and thegate electrode can be decreased in the subsequent step of forming thecontact hole.

Fifth Embodiment

A fifth embodiment is a modification of the fourth embodiment and isfeatured in that the second insulating film in the peripheral circuitregion is removed completely.

FIG. 22 is a cross sectional view showing the memory cell array regionand the peripheral circuit region of a semiconductor device according tothe fifth embodiment of the present invention. Only that construction ofthe fifth embodiment which differs from that of the fourth embodimentwill now be described.

Depending on the performance and the operating voltage required for theperipheral circuit, the gate of the transistor constituting theperipheral circuit must be made very short in some cases. In this case,it is necessary to make small the open portion 17 of the secondinsulating film 17. However, if the size of the opening is very small,it is very difficult to form the open portion 17 if using the thirdembodiment.

Such being the situation, the second insulating film 16 is completelyremoved in the transistor of the peripheral circuit region, as shown inFIG. 22. The memory cell region and the selective gate region are samestructure the first embodiment.

In other words, the peripheral circuit region of the semiconductordevice according to the fifth embodiment of the present inventioncomprises the semiconductor layer 11, the semiconductor isolating region15 isolating the element region 10 of the semiconductor layer 11, thefirst electrode layer 13 formed above the element region 10 with thefirst insulating film 12 interposed therebetween and self-aligned withthe element isolating region 15, and the second electrode layer 18formed on the first electrode layer 13 and the element isolating region15.

The fifth embodiment of the present invention produces the effectssimilar to those produced by the fourth embodiment.

Further, the fifth embodiment is effective in the case where the gatelength of the transistor is very short. It should be noted, however,that, since the peripheral circuit transistor differs from the memorytransistor and the selective transistor in the gate structure, it isnecessary to apply the gate processing separately to the memory cellarray region, the selective gate region and the peripheral circuitregion, leading to an increase in the number of manufacturing steps.However, since the memory transistor and the selective transistor areequal to each other in the construction of the gate edge portion, thememory cell array region and the selective gate region can be processedsimultaneously so as to make it unnecessary to provide processingboundary. It follows that the fifth embodiment produces a prominenteffect in decreasing the total area of the memory cell array like theother embodiments described previously.

Incidentally, the selective transistor is generally designed somewhatlonger than the minimum possible size of the lithography because theselective transistor is required to withstand a high voltage requiredfor driving the memory cell. It follows that it is sufficiently possibleto form the fine open portion 17 by, for example, the method describedpreviously in conjunction with the third embodiment of the presentinvention.

Sixth Embodiment

A sixth embodiment is featured in that a contact hole is formed abovethe element region in which the second insulating film is present so asto decrease the area of the peripheral transistor.

FIG. 23 is a plan view showing the peripheral circuit region of asemiconductor device according to a sixth embodiment of the presentinvention. FIG. 24 is cross sectional view of the semiconductor devicealong the line XXIV-XXIV shown in FIG. 23. FIG. 25 is a plan viewshowing the peripheral circuit region and the memory cell array regionof the semiconductor device according to the sixth embodiment of thepresent invention. In the sixth embodiment, the construction of thememory cell array region and the selective gate region is equal to thatin the first embodiment. Therefore, the description is omitted inrespect of the constructions of the memory cell array region and theselective gate region.

As shown in FIGS. 23, 24 and 25, the semiconductor device In theperipheral circuit region comprises a semiconductor layer 11, an elementisolating region 15 for isolating an element region 10 of thesemiconductor layer 10, a first electrode layer 13 formed above theelement region with a first insulating film 12 interposed therebetweenand self-aligned with the element isolating region 15, a secondinsulating film 16 having an open portion 17 exposing partly the surfaceof the first electrode layer 13, a second electrode layer 18 formed onthe second insulating film 16 and within the open portion 17, and acontact hole 20 formed above the element region 10 and connected to thesecond electrode layer 18. It should be noted that the first electrodelayer 13 and the second electrode layer 18 are connected to each othervia the open portion 17.

The sixth embodiment produces effects similar to those produced by thefourth embodiment and additional effects as described below.

In general a barrier metal film (Ti/TiN), an Al—Cu film, etc. are formedin the contact hole 20 by a sputtering method for connection of thecontact hole 20 to the gate. What should be noted is that Ti in thebarrier metal film reacts with polysilicon forming the second electrodelayer 18 so as to form a TiSi layer. Therefore, where the secondinsulating film 16 is not formed, the TiSi layer is formed to extendfrom the interface between the contact hole 20 and the second electrodelayer 18 to reach a region near the first insulating film 12, making itpossible to destroy the first insulating film 12. Such being thesituation, the contact hole 20 connected to the gate is not formed ingeneral above the element region 10.

In the sixth embodiment, however, the second insulating film 16 isinterposed between the first electrode layer 13 and the second electrodelayer 18. What should be noted is that the second insulating film 16thus formed acts as a protective film so as to avoid the problemdescribed above. Particularly, where a composite film including asilicon nitride film is used as the second insulating film 16, thenitride film is highly effective for avoiding the influences given tothe metal of the upper layer having a high melting point and to theunderlying polysilicon film of the silicide layer.

As described above, according to the sixth embodiment of the presentinvention, the second insulating film 16 is left unremoved so as to makeit possible to form the contact hole 20 above the element region 10. Itfollows that it is possible to obtain prominent effects similar to thoseobtained in each of the first to third embodiments described previously,as described below.

First of all, the sixth embodiment of the present invention shown inFIG. 26B, in which the contact hole 20 is formed above the elementregion 10, permits decreasing the area of the peripheral circuit,compared with the conventional structure shown in FIG. 26A, in which thecontact hole 20 is formed above the element separating region.

What should also be noted is that the sixth embodiment of the presentinvention makes it possible to increase the inversion voltage of theelement separating region 15 without increasing the peripheral circuitregion. To be more specific, in a semiconductor device using a highvoltage such as a NAND type flash memory, it is necessary to increasethe inversion voltage of the element separating region 15 below thegate. In this case, it was necessary to take measures. For example, itwas necessary to increase the impurity concentration in the impuritydiffusion layer 11′ of the semiconductor layer 11 below the elementseparating region 15, as shown in FIG. 27. Alternatively, it wasnecessary to increase the thickness of the element separating region 15,as shown in FIG. 28. However, these measures are not desirable becausethe processing is rendered difficult or the withstand voltage of thebonding is lowered. Another method is shown in FIG. 29A and FIG. 30A. Inthis case, the gate electrode is divided on the element isolating region15, and the gate electrode is connected to the upper wiring 21 via acontact hole 20 in place of connecting the adjacent transistors by thegate electrode. In this method, however, a region for forming thecontact hole 20 above the element separating region 15 is required,resulting in an increase in the peripheral circuit region. The sixthembodiment of the present invention permits overcoming the particularproblem. Specifically, in the sixth embodiment of the present invention,the inversion voltage of the element separating region 15 can beincreased without increasing the peripheral circuit region by formingthe insulating film 16 in a part of the region between the first andsecond electrode layers 13, 18 and by forming the contact hole 20 abovethe element region 15.

Incidentally, the sixth embodiment of the present invention can also beapplied to the case where the control gate of the memory cell is of atwo-layer structure consisting of the second electrode layer 18 a andthe third electrode layer 18 b as in the second and third embodimentsdescribed previously.

Seventh Embodiment

A seventh embodiment of the present invention is featured in that thewidths of the open portions of the insulating films are made equal toeach other in a plurality of peripheral circuit transistors.

FIG. 31 is a plan view showing a semiconductor device according to theseventh embodiment of the present invention, and FIG. 32 is a crosssectional view of the semiconductor device along the lines XXXII-XXXIIshown in FIG. 31. The characterizing part alone of the seventhembodiment will now be described.

As shown in FIGS. 31 and 32, in a plurality of transistors arranged onthe chip, each of the second insulating film 16 formed on the firstelectrode layer 13 and the second electrode layer 18 a has an openportion 17 exposing partly the surface of the first electrode layer 13.A third electrode layer 18 b is formed within the open portion 17 and onthe second insulating film 16, and a fourth electrode layer 18 c isformed on the third electrode layer 18. In the transistor having a gateelectrode consisting of the first to fourth electrode layers 13, 18 a,18 b and 18 c, the widths c of all the open portions 17 are made equalto each other.

The seventh embodiment produces effects similar to those produced by thefourth embodiment and additional effects as described below.

The widths c of the open portions 17 in all the gate electrodes on thechip are made equal to each other. As a result, where the open portions17 are filled with the third electrode layer 18 b, it is possible tosuppress to the minimum level the nonuniformity in the stepping of thethird electrode layer 18 b. It follows that the seventh embodiment isadapted for depositing flat the third electrode layer 18 b.

It should also be noted that If the widths c of the open portions 17 aremade equal to each other, the patterning by the lithography can becontrolled easily in forming the open portions 17.

Further, the seventh embodiment of the present invention makes itpossible to suppress the dimensional nonuniformity of the widths c ofthe open portions 17.

Eighth Embodiment

An eighth embodiment is featured in that a plurality of open portionsare formed in the same gate electrode and the widths of these openportions are made equal to each other.

FIG. 33 is a plan view showing a semiconductor device according to theeighth embodiment of the present invention, and FIG. 34 is a crosssectional view of the semiconductor device along the line XXXIV-XXXIVshown in FIG. 33. The characterizing portion alone of the eighthembodiment will now be described.

As shown in FIGS. 33 and 34, in the gate electrode of the transistor, aplurality of open portions 17 each exposing a part of the surface of thefirst electrode layer 13 are formed in each of a second insulating film16 and a second gate electrode 18 a formed on the first electrode layer13. A third electrode layer 18 b is formed within these open portions 17and on the second insulating film 16. Further, a fourth electrode layer18 c is formed on the third electrode layer 18 b. It should be notedthat the widths c of the plural open portions 17 in the same gateelectrode are equal to each other.

According to the eighth embodiment of the present invention, since thewidths c of the open portions 17 are equal to each other, it is possibleto obtain the effects similar to those produced by the seventhembodiment.

Further, a plurality of open portions 17 are formed in the same gateelectrode so as to increase the connection area between the firstelectrode layer 13 and the third electrode layer 18 b. As a result, itis possible to decrease the contact resistance between the firstelectrode layer 13 and the third electrode layer 18 b.

Incidentally, in forming a plurality of open portions within the samegate electrode, it is possible to form the open portions 17 in the cross(+) shape as shown in FIG. 35. By forming the open portions 17 in thecross shape, more open portions 17 can be formed in the same gateelectrode, making it possible to further increase the connection areaand to further decrease the contact resistance.

Ninth Embodiment

An ninth embodiment is featured in that, in forming a plurality of openportions in the same gate electrode as in the eighth embodimentdistances between the adjacent open portions 17 are made uniform. FIG.36 is a plan view showing a semiconductor device according to the ninthembodiment of the present invention and FIG. 37 is a cross sectionalview of the semiconductor device along the line XXXVII-XXXVII shown inFIG. 36. The characterizing portion alone of the ninth embodiment willnow be described.

As shown in FIGS. 36 and 37, a plurality of open portions 17 eachexposing partly the surface of the first electrode layer 13 are formedin each of the second insulating film 16 formed on the first electrodelayer 13 and the second electrode layer 18 a formed on the secondinsulating film 16 in the gate electrode of the transistor. Further, athird electrode layer 18 b is formed within the open portions 17 and onthe second insulating film 16, and a fourth electrode layer 18 c isformed on the third electrode layer 18 b. It should be noted that thewidths c of the plural open portions in the same gate electrode areequal to each other. Also, the distances d between the adjacent openportions 17 are equal to each other.

According to the ninth embodiment of the present invention, since aplurality of open portions 17 are formed and the widths c of these openportions are equal to each other, it is possible to obtain the effectssimilar to those obtained in the seventh and eighth embodimentsdescribed previously.

Further, the distances d between the adjacent open portions 17 formed inthe gate electrode are equal to each other. It should be noted that, inorder to form the open portions 17 at a uniform interval, it isnecessary to form the light exposure portions at the same width in thelithography step for forming the open portions 17, as shown in FIG. 38.It follows that it is possible to suppress to the minimum level theprocessing nonuniformity of a resist 22′ caused by the light proximityeffect at the adjacent light exposure portion.

It is possible to apply the ninth embodiment of the present invention toa NAND type flash memory.

In the NAND type flash memory, the selective transistor and theperipheral circuit transistor, which differ from each other in the gatelength, are formed in same chip, as shown in FIGS. 39A and 39B. In thiscase, the distance e1 between the adjacent open portions 17 formed ineach of a plurality of selective gate transistors is made equal to thedistance e2 between the adjacent open portions 17 formed in the samegate electrode of the peripheral circuit transistor. As a result, it ispossible to suppress to the minimum level the processing nonuniformityof the resist 22′ shown in FIG. 38 within the same chip.

In general the size of the selective transistor is smaller than that ofthe peripheral circuit transistor. Therefore, in order to miniaturizethe element, it is advisable to determine the distances e1 and e2 notedabove such that the distance e2 between the adjacent open portions inthe peripheral circuit transistor is determined in accordance with thedistance e1 between the open portions 17 in the selective transistor onthe basis of the distance e1 noted above.

Tenth Embodiment

A tenth embodiment is featured in that the open portion is allowed toextend from above the element region onto the element isolating regionin the direction of the channel width.

FIG. 40A is a cross sectional view showing the semiconductor deviceaccording to the fourth embodiment of the present invention. FIGS. 40Band 40C are cross sectional views collectively showing a semiconductordevice according to the tenth embodiment of the present invention. Thecharacterizing portion of the tenth embodiment will now be described.

In the fourth embodiment, etc. described previously, the open portion 17is formed within the element region 10 as shown in FIG. 40A. In thetenth embodiment however, the open portion 17 is formed to extend fromwithin the element region 10 to reach the edge portion of the elementregion 10, as shown in FIG. 40B. Also, the open portion 17 is formed toextend from Within the element region 10 onto the element isolatingregion 15, as shown in FIG. 40C. The open portion 17 extends in thedirection of the channel width f of the gate electrode.

According to the ninth embodiment of the present invention, whichproduces the effect similar to that obtained in the fourth embodiment.

Further, the open portion 17 is allowed to extend from above the elementregion 10 onto the element isolating region 15 in the direction of thechannel width f. As a result, the open portion 17 can be formed withoutbeing restricted by the limit of the processing of the lithography evenin the case of a transistor having a small channel width f.

Eleventh Embodiment

An eleventh embodiment is featured in that defined is the relationshipbetween the width of the open portion and the thickness of the electrodelayer deposited in a manner to fill the open portion.

FIGS. 41A and 41B are cross sectional views collectively showing asemiconductor device according to the eleventh embodiment of the presentinvention. The characterizing portion of the eleventh embodiment willnow be described.

As shown In FIGS. 41A and 41B, an open portion 17 is formed in each of asecond insulating film 16 formed on the first insulating layer 13 and asecond electrode layer 18 a formed on the second insulating film 16 ineach of a plurality of transistors arranged on the chip. Also, a thirdelectrode layer 18 b is formed within the open portion 17 and on thesecond insulating film 16. It should be noted that the widths c of theopen portions formed in these transistors are equal to each other. Also,in this case, the thickness of the third electrode layer 18 b whendeposited is at least half the width c of the open portion 17. It ispossible to decrease the width c of the open portion 17 by employing themethod described previously in conjunction with the third embodiment ofthe present invention.

According to the eleventh embodiment of the present invention, whichproduces the effect similar to that obtained in the fourth embodiment.

Further, the widths c of the open portions of the transistors are madeequal to each other, and the thickness of the third electrode layer 18 bwhen deposited is set at a value not smaller than c/2. As a result, theopen portion 17 is filled completely with the third electrode layer 18 bwithout fail, and the third electrode layer 18 c can be deposited inmanner to have a smooth upper surface.

It should also be noted that, since the width c of the open portion 17is made small, it is possible to decrease the thickness of the thirdelectrode layer 18 b required for allowing the surface of the thirdelectrode layer 18 b to be smooth. It follows that it is possible todecrease the total height of the gate electrode. As a result, the aspectratio of the space S of the gate electrode of the memory cell arrayregion is diminished so as to make it possible to bury easily a thirdinsulating film 19 for insulating the upper wiring (not shown) and thegate electrode in the space s of the gate electrode, as shown in FIG.41B.

Since the eleventh embodiment produces the particular effects describedabove, it is possible to avoid the problems described below.

The first problem is that, where the width of the open portion 17 is atleast twice the deposition thickness a of the third electrode layer 18b, a stepped portion is formed on the surface of the third electrodelayer 18 b on the open portion 17, if the third electrode layer 18 b isdeposited within the open portion 17, as shown in FIG. 42A.

The second problem is that a fourth electrode layer 18 c, e.g., a WSilayer, is formed on the third electrode layer 18 b, followed by forminga resist 22′ on the fourth electrode layer 18 c, as shown in FIG. 42B.When the resist 22′ is patterned by the lithography technology forforming the gate electrode, a stepped portion is formed in the thirdelectrode layer 18 b. What should be noted is that a focus deviation isbrought about by the stepped portion, resulting in failure to form theresist 22′ in a desired shape. It follows that the finished shape afterprocessing of the gate electrode is rendered partially different insize.

The third problem is that, where a fourth electrode layer 18 c isdeposited on the third electrode layer 18 b as shown in FIG. 42C, thestepped portion generated when the third electrode layer 18 b isdeposited tends to cause a region 30 that does not fill the steppedportion to be formed on the third electrode layer 18 b on the openportion 17.

The fourth problem is that, in order to deposit the third electrodelayer 18 b in a manner to have a flat surface in all the transistorsdiffering from each other in the gate length, it is necessary for thedeposition thickness of the third electrode layer 18 b to be at leasthalf the maximum width of the open portion so as to fill the openportion having the maximum width of the open portion as shown in FIG.43A, if the widths of the open portions of the transistors arenonuniform. As a result, the deposition thickness of the third electrodelayer 18 b is increased so as to make it difficult to process the gateelectrode.

The fifth problem is that, if the deposition thickness of the thirdelectrode layer 18 b is increased as pointed out in conjunction with thefourth problem, the space s between the adjacent gate electrodes isformed in the memory cell array region in a manner to have a high aspectratio as shown in FIG. 43B. As a result, it is rendered difficult tofill sufficiently the space S with an interlayer insulating film 19 forinsulating the upper wiring (not shown) and the element region 10,giving rise to generation of a void 31.

Twelfth Embodiment

A twelfth embodiment is featured in that the relationship between thewidth of the open portion and the thickness of the electrode layerfilling the open portion is defined and a treatment to planarize thesurface of the electrode layer is applied.

FIGS. 44A and 44B are cross sectional views collectively showing asemiconductor device according to the twelfth embodiment of the presentinvention. The characterizing portion of the twelfth embodiment will nowbe described.

As shown in FIG. 44A, the width c of the open portion 17 is setconstant, and the third electrode layer 18 b is deposited in a thicknessnot smaller than half the width c of the open portion as in the eleventhembodiment. Then, as shown in FIG. 44B, the surface of the thirdelectrode 18 b is planarized by CDE (Chemical Dry Etching) or CMP 25(Chemical Mechanical Polish).

According to the twelfth embodiment of the present invention, whichproduces the effect similar to that obtained in the eleventh embodiment.

Further, the thickness of the third electrode layer 18 b can be madesmaller than the thickness in the step of depositing the third electrodelayer by planarizing the surface of the third electrode layer 18 b byCDE or CMP. In other words, since the total thickness of the gateelectrode can be decreased, the clearance between the adjacent gateelectrodes can be filled more easily with the third insulating film 19than in the eleventh embodiment.

Incidentally, in each of the first to twelfth embodiments of the presentinvention described above, the first electrode layer 13 is of a singlelayer structure for the sake of brevity. However, it is possible tomodify the first electrode layer 13 in various fashions. For example, itis possible for the first electrode layer to be of a two-layer structureconsisting of electrode layers 13 a and 13 b. It is also possible forthe first electrode layer to have a two dimensional convex-concaveportion. Also, in each of the first to twelfth embodiments describedabove, the first electrode layer 13 is self-aligned with the elementregion 10. However, it is possible for the first electrode layer 13 toprotrude in a self-aligned fashion from the element region 10 toward theelement separating region 15.

Additional advantages and modifications will readily occur to thoseskilled in the art. Therefore, the invention in its broader aspects isnot limited to the specific details and representative embodiments shownand described herein. Accordingly, various modifications may be madewithout departing from the spirit or scope of the general inventiveconcept as defined by the appended claims and their equivalents.

1. A semiconductor device comprising: a semiconductor layer; a firstinsulating film formed on said semiconductor layer; a first electrodelayer formed on said first insulating layer; an element isolating regionincluding an element isolating insulating film formed to extend throughsaid first electrode layer and said first insulating film to reach aninner region of said semiconductor layer, said element isolating regionisolating an element region and being self-aligned with said firstelectrode layer; a second insulating film formed on said first electrodelayer and said element isolating region, first and second open portionsexposing surfaces of said first electrode layer being formed in saidsecond insulating film, widths of the first and second open portionsbeing equal to each other; and a second electrode layer formed abovesaid second insulating film and said exposed surfaces of said firstelectrode layer, said second electrode layer being electricallyconnected to said first electrode layer via said first and second openportions.
 2. The semiconductor device according to claim 1, wherein saidfirst and second open portions are formed to cross each other.
 3. Thesemiconductor device according to claim 1, wherein the distances betweenthe first and second open portions are equal to each other.
 4. Thesemiconductor device according to claim 1, further comprising aplurality of selective transistors formed of said first and secondelectrode layers in a NAND type flash memory, and a peripheral circuittransistor formed of said first and second electrode layers, said secondinsulating film of said plural selective transistors includes said firstand second open portions, and said second insulating film of saidperipheral circuit transistor includes said first and second openportions, and a first distance between the first and second openportions of said plural selective transistors is equal to a seconddistance between the first and second open portions within a gateelectrode of said peripheral circuit transistor.
 5. The semiconductordevice according to claim 4, wherein said second distance is defined ona basis of said first distance.
 6. The semiconductor device according toclaim 1, further comprising a third electrode layer formed on an uppersurface of the second insulating film.
 7. The semiconductor deviceaccording to claim 6, wherein said first and second open portions areformed to cross each other.
 8. The semiconductor device according toclaim 6, wherein the distances between the first and second openportions are equal to each other.
 9. The semiconductor device accordingto claim 6, further comprising a plurality of selective transistorsformed of said first, second and third electrode layers in a NAND typeflash memory, and a peripheral circuit transistor formed of said first,second and third electrode layers, said second insulating film of saidplural selective transistors includes said first and second openportions, and said second insulating film of said peripheral circuittransistor includes said first and second open portions, and a firstdistance between the first and second open portions of said pluralselective transistors is equal to a second distance between the firstand second open portions within a gate electrode of said peripheralcircuit transistor.
 10. The semiconductor device according to claim 9,wherein said second distance is defined on a basis of said firstdistance.
 11. The semiconductor device according to claim 1, wherein theelement isolating insulating film is located under the first and secondopen portions and has first and second grooves having a shape which isthe same as a shape of the first and second open portions.
 12. Thesemiconductor device according to claim 6, wherein the element isolatinginsulating film is located under the first and second open portions andhas first and second grooves having a shape which is the same as a shapeof the first and second open portions.